Type Designator: RJP30H2A
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 60
Maximum Collector-Emitter Voltage |Vce|, V: 360
Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
Maximum Gate-Emitter Voltage |Veg|, V: 30
Maximum Collector Current |Ic|, A: 35
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 180
Maximum Collector Capacity (Cc), pF: 60
Package: TO263
دیدگاهها0
هیچ دیدگاهی برای این محصول نوشته نشده است.